SEMI MF1391 - Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption -

Abstract

This Standard was technically approved by the global Silicon Wafer Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 30, 2012. Available at www.semiviews.org and www.semi.org in September 2012; originally published by ASTM International as ASTM F1389; previously published November 2007.

　

Carbon may have an important role in defect formation processes. Some laboratories have attributed carbon as being involved in the formation of swirl. Carbon has also been shown to serve as a nucleation center for the precipitation of oxygen.

　

Although electrically inactive, substitutional carbon causes stress that can be observed by X-ray topography. Direct effects on the reverse bias characteristics of power devices and annealing problems in neutron transmutation doped silicon have been associated with carbon.

　

This Test Method has applicability in production control, materials research, quality assurance, and materials acceptance.

　

Referenced SEMI Standards

SEMI M59 — Terminology for Silicon Technology

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