SEMI M64 - 赤外線吸収スペクトル法による絶縁(SI)가리움히素単結晶内のEL2深いドナー濃度の試験方法 -

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Volume(s): Materials
Language: Japanese
Type: Single Standards Download (.pdf)
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개정: SEMI M64-0306 - 대체됨

개정

Abstract

本試験方法は，global Compound Semiconductor Committee で技術的に承認されている。現版は2005年11月29日、global Audits and Reviews Subcommittee にて発行が承認された2006年1。 にwww.semi. org 로, 2006년 3 월에 CD-ROM 으로 전화할 수 있습니다.

本文書の目的は，赤外線吸収法によってSI GaAs 内の深idedna ーEL2 の濃度を測定する方法を指定する ことである.

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