SEMI MF397 - Test Method for Resistivity of Silicon Bars Using a Two-Point Probe -

Abstract

This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 1, 2018. Available at www.semiviews.org and www.semi.org in July 2018; originally published by ASTM International as ASTM F397; previously published August 2012.

Control of the resistivity of semiconductor crystals is an important aspect of wafer manufacturing. Also, the resistivity of a silicon crystal is an important materials acceptance requirement.

This Test Method is recommended for material acceptance and manufacturing control of single-crystal bulk silicon. It is also applicable to other semiconductor materials but neither the appropriate conditions of measurement nor the expected precision have been experimentally determined.

This Test Method covers the measurement of the resistivity of single-crystal bars having cross sections that are uniform in area and square, rectangular or round in shape, and having resistivity between 0.0009 and 3000 Ω·cm.

This Test Method is intended for use on single crystals of silicon of either n- or p-type for which the uniformity of the crystal cross section is such that the area can be accurately calculated. The specimen cross-sectional area shall be constant to within ±1% of the average area as determined by measurements along the crystal axis.

Referenced SEMI Standards

SEMI C19 — Specification for Acetone
SEMI C28 — Specification and Guide for Hydrofluoric Acid
SEMI C31 — Specification for Methanol
SEMI C35 — Specification and Guide for Nitric Acid
SEMI M59 — Terminology for Silicon Technology
SEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials

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