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SEMI M63 - Test Method for Measuring the Al Fraction in AlGaAs on GaAs Substrates by High Resolution X-Ray Diffraction -
Abstract
This Standard was technically approved by the Compound Semiconductor Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on July 6, 2015. Available at www.semiviews.org and www.semi.org in September 2015; originally published March 2006.
The purpose of this Test Method is to describe the use of high resolution X-ray diffraction (HRXRD) as a means of measuring the Al fraction in an AlGaAs epilayer on GaAs substrates, by defining the experimental method and explaining the analysis.
This Test Method addresses measurement of the composition of unrelaxed, undoped AlGaAs epilayers on <001>-oriented GaAs substrates.
Principles are given for a standardized measurement method.
There are differing parameters for analysis already widely in use, either for historical reasons or from local values (e.g., of GaAs lattice parameter) which are appropriate to that user. As such, examples of analysis are given but a single standardized analysis is avoided.
With the standardized measurement method and a guide for standardized reporting of results, it should be possible to reproduce measurements at different sites, using suitable equipment.
Referenced SEMI Standards
None.
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