SEMI M41 - Specification of Silicon-on-Insulator (SOI) for Power Device/ICs -

Abstract

This Standard was technically approved by the Silicon Wafer Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on February 10, 2015. Available at www.semiviews.org and www.semi.org in June 2015; originally published June 2000; previously published December 2013.

　

This Specification covers requirements for silicon-on-insulator (SOI) for semiconductor power-device/IC manufacture. By defining inspection procedures and acceptance criteria, both users and suppliers may define product characteristics and quality requirements.

　

This Specification provides requirements of SOI wafers, which are used for power devices/ICs of specific voltage applications. The voltage ranges cover low voltage (40 to 60V), medium voltage (150 to 250V) and high voltage (500 to 600V). The specification covers physical, electrical, and surface parameters pertinent to bonded SOI wafers.

　

Included in this Document is a list of goals for inspection of these wafers which need to be negotiated between the users and suppliers of bonded SOI wafers.

　

Referenced SEMI Standards

SEMI M1 — Specifications for Polished Single Crystal Silicon Wafers
SEMI M52 — Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11　nm Technology Generations
SEMI M53 — Practice for Calibrating Scanning Surface Inspection Systems Using Certified Depositions of Polystyrene Latex Spheres on Unpatterned Semiconductor Wafer Surfaces
SEMI M59 — Terminology for Silicon Technology
SEMI M62 — Specifications for Silicon Epitaxial Wafers
SEMI M71 — Specification for Silicon-on-Insulator (SOI) Wafers for CMOS LSI
SEMI MF26 — Test Methods for Determining the Orientation of a Semiconductive Single Crystal
SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials
SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials
SEMI MF81 — Test Method for Measuring Radial Resistivity Variation on Silicon Wafers
SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe
SEMI M95 — Specification of Silicon-on-Insulator (SOI) for Power Device/ICs
SEMI MF110 — Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique
SEMI MF154 — Guide for Identification of Structures and Contaminants Seen on Specular Silicon Surfaces
SEMI MF399 — Test Method for Thickness of Heteroepitaxial or Polysilicon Layers (Withdrawn 0710)
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers
SEMI MF576 — Test Method for Measurement of Insulator Thickness and Refractive Index on Silicon Substrates by Ellipsometry
SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials
SEMI MF847 — Test Methods for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques
SEMI MF928 — Test Methods for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates
SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers
SEMI MF1153 — Test Method for Characterization of Metal-Oxide-Silicon (MOS) Structures by Capacitance-Voltage Measurements
SEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline
SEMI MF1390 — Test Method for Measuring Warp on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption
SEMI MF1527 — Guide for Application of Silicon Standard Reference Materials and Reference Wafers for Calibration and Control of Instruments for Measuring Resisitivity of Silicon
SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Thickness Variation on Silicon Wafers by Automated Noncontact Scanning
SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance
SEMI MF1617 — Test Method for Measuring Surface Sodium, Aluminum, Potassium, and Iron on Silicon and EPI Substrates by Secondary Ion Mass Spectroscopy
SEMI MF1619 — Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at Brewster Angle
SEMI MF1726 — Practice for Analysis of Crystallographic Perfection of Silicon Wafers
SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers

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