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1910 products

M07600 - SEMI M76 - 開発用直径450 mmシリコン単結晶鏡面ウェーハの仕様
SEMI M76 - 開発用直径450 mmシリコン単結晶鏡面ウェーハの仕様 Sale priceMember Price: €135,00
Non-Member Price: €205,95
M07700 - SEMI M77 - Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROA
SEMI M77 - Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROA Sale priceMember Price: €113,00
Non-Member Price: €171,95
M07700 - SEMI M77 - ロールオフ量(ROA)を使ってウェーハのエッジ近傍形状を決定するための作業方法
M07800 - SEMI M78 - Guide for Determining Nanotopography of Unpatterned Silicon Wafers High Volume Manufacturing
M07800 - SEMI M78 - 量産時における130nmから22nm世代のパターンなしシリコンウェーハ上のナノトポグラフィー決定に関するガイド
M07900 - SEMI M79 - Specification for Round 100 mm Polished Monocrystalline Germanium Wafers for Solar Cell Applications
M07900 - SEMI M79 - 太陽電池用円盤状100 mm鏡面研磨単結晶ゲルマニウムウェーハの仕様
M08000 - SEMI M80 - 450 mmウェーハの搬送および出荷用フロントオープニング・シッピングボックスの機械仕様
M08000 - SEMI M80 - Specification for Front-Opening Shipping Box Used to Transport and Ship 450 mm Wafers
M08100 - SEMI M81 - Guide to Defects Found in Monocrystalline Silicon Carbide Substrates
SEMI M81 - Guide to Defects Found in Monocrystalline Silicon Carbide Substrates Sale priceMember Price: €113,00
Non-Member Price: €171,95
M08100 - SEMI M81 - 単結晶シリコンカーバイド基板に存在する欠陥についてのガイド
M08200 - SEMI M82 - Test Method for the Carbon Acceptor Concentration in Semi-Insulating Gallium Arsenide Single Crystals by Infrared Absorption Spectroscopy
M08300 - SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors
M08400 - SEMI M84 - Specification for Polished Single Crystal Silicon Wafers for Gallium Nitride-On-Silicon Applications
M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry
M08600 - SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers
SEMI M86 - Specification for Polished Monocrystalline c-Plane Gallium Nitride Wafers Sale priceMember Price: €113,00
Non-Member Price: €171,95
M08700 - SEMI M87 - Test Method for Contactless Resistivity Measurement of Semi-Insulating Semiconductors
M08800 - SEMI M88 - Practice for Sample Preparation Methods for Measuring Minority Carrier Diffusion Length in Silicon Wafers by Surface Photovoltage Methods
M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p/p+, n/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method
M09000 - SEMI M90 - Test Method for Bulk Micro Defect Density and Denuded Zone Width in Annealed Silicon Wafers by Optical Microscopy After Preferential Etching
M09100 - SEMI M91 - Test Method for Determination of Threading Screw Dislocation Density in 4H-SIC by X-Ray Topography
M09200 - SEMI M92 - Specification for 4H-SIC Homoepitaxial Wafer
M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography/Imaging
M09400 - SEMI M94 - Specification for Silicon Carbide Engineered Substrates
SEMI M94 - Specification for Silicon Carbide Engineered Substrates Sale priceMember Price:
Non-Member Price: €171,95