{"product_id":"m09200-semi-m92-specification-for-4h-sic-homoepitaxial-wafer","title":"M09200 - SEMI M92 - Specification for 4H-SIC Homoepitaxial Wafer","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e* This Standard has the option to purchase the Current document with a redline document (Current + Redline). The redline document is included with the Current document as a comparison tool to help identify changes that have been made between the Current version and the previous version (Superseded). If differences should exist between the redline document and the Current document, the Current version is the official and authoritative version.\u003c\/strong\u003e\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e1  Purpose\u003cbr\u003e1.1  This Specification covers requirements for 4H-SiC homoepitaxial wafers used in power device manufacturing.\u003cbr\u003e1.2  This Specification provides a uniform standard of 4H-SiC homoepitaxial wafers for the suppliers and the customers in the industrial chain.\u003cbr\u003e2  Scope\u003cbr\u003e2.1  This Specification specifies the parameters of 4H-SiC homoepitaxial wafers with a single epitaxial layer grown on an n-type substrate, up to and including 30 µm total thickness.\u003cbr\u003e2.2  Dimensional requirements are provided for the following categories of epitaxial wafers:\u003cbr\u003e• 100.0 mm 4H-SiC epitaxial wafers\u003cbr\u003e• 150.0 mm 4H-SiC epitaxial wafers\u003cbr\u003eNOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and determine the applicability of regulatory or other limitations prior to use.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M1 — Specification for Polished Single Crystal Silicon Wafers\u003cbr\u003eSEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers\u003cbr\u003eSEMI M55 — Specification for Polished Monocrystalline Silicon Carbide Wafers\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI M81 — Guide to Defects Found on Monocrystalline Silicon Carbide Substrates\u003cbr\u003eSEMI M83 — Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors\u003cbr\u003eSEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal\u003cbr\u003eSEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer\u003cbr\u003eSEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces\u003cbr\u003eSEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers\u003cbr\u003eSEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials\u003cbr\u003eSEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge\u003cbr\u003eSEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques\u003cbr\u003eSEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning\u003cbr\u003eSEMI MF1392 —Test Method for Determining Net Carrier Density Profiles in Silicon Wafers By Capacitance-Voltage Measurements with a Mercury Probe\u003cbr\u003eSEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafer by Automated Noncontact Scanning\u003cbr\u003eSEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers\u003cbr\u003eNOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI M92-0326 (technical revision)\u003cbr\u003eSEMI M92-0824 (technical revision)\u003cbr\u003eSEMI M92-0423 (first published)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI M92-0326 - Current","offer_id":43106850865219,"sku":"19065","price":193.0,"currency_code":"USD","in_stock":true},{"title":"SEMI M92-0326 - Current + Redline","offer_id":43106850897987,"sku":"19066","price":236.0,"currency_code":"USD","in_stock":true},{"title":"SEMI M92-0824 - Superseded","offer_id":43106850930755,"sku":"17983","price":193.0,"currency_code":"USD","in_stock":true},{"title":"SEMI M92-0423 - Superseded","offer_id":43106850963523,"sku":"16493","price":193.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MVolume.png?v=1776701242","url":"https:\/\/store-dev2.semi.org\/products\/m09200-semi-m92-specification-for-4h-sic-homoepitaxial-wafer","provider":"SEMI Dev 2","version":"1.0","type":"link"}