{"product_id":"m09300-semi-m93-test-method-for-quantifying-basal-plane-dislocation-density-in-4h-sic-by-x-ray-diffraction-topography-imaging","title":"M09300 - SEMI M93 - Test Method for Quantifying Basal Plane Dislocation Density in 4H-SiC by X-Ray Diffraction Topography\/Imaging","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eBasal plane dislocations (BPDs) are detrimental for devices manufactured on 4H-SiC substrates, especially for bipolar devices for power electronics.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eMost BPDs are transformed into threading edge dislocations (TEDs) when growing epitaxial layers on top of 4H-SiC substrates, but a small fraction is also transferred into the epitaxial layer or may result in the formation of stacking faults (SFs), both being critical defects potentially causing device failure.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThe density and distribution of BPDs are therefore important parameters describing the quality of a substrate. The specification of these parameters helps to select the appropriate material for a certain task.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThe quantification of BPDs is possible by X-ray diffraction topography (XRT)—also known as X-ray diffraction imaging (XRDI). This Test Method provides information on the procedure to measure the BPD density using this technique and can be used for acceptance testing.\u003c\/p\u003e\u003cp\u003e\u003cbr\u003eThis Test Method covers the determination of BPD density on round test slices and commercial 4H-SiC substrates using XRT\/XRDI.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThe BPD density is used as a measure of the crystallographic perfection of a crystal.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method describes the requirements of the sample quality, the procedure to obtain a topogram suitable for BPD density measurement and to calibrate the results against results from etch pit data.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M55 — Specification for Polished Monocrystalline Silicon Carbide Wafers\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI M81 — Guide to Defects Found in Monocrystalline Silicon Carbide Substrates\u003cbr\u003eSEMI M83 — Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI M93-0624 (technical revision)\u003cbr\u003eSEMI M93-0923 (first published)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI M93-0624 - Current","offer_id":43106843394115,"sku":"17688","price":171.95,"currency_code":"EUR","in_stock":true},{"title":"SEMI M93-0923 - Superseded","offer_id":43106843426883,"sku":"17133","price":171.95,"currency_code":"EUR","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MVolume_4103f0d2-b5ec-4882-9aa1-adddeea317ba.png?v=1776701098","url":"https:\/\/store-dev2.semi.org\/en-nl\/products\/m09300-semi-m93-test-method-for-quantifying-basal-plane-dislocation-density-in-4h-sic-by-x-ray-diffraction-topography-imaging","provider":"SEMI Dev 2","version":"1.0","type":"link"}