{"product_id":"pv07000-semi-pv70-test-method-for-in-line-measurement-of-saw-marks-on-photovoltaic-pv-silicon-wafers-by-laser-triangulation-sensors","title":"PV07000 - SEMI PV70 - Test Method for In-Line Measurement of Saw Marks on Photovoltaic (PV) Silicon Wafers by Laser Triangulation Sensors","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003eThis Standard was technically approved by the Photovoltaic - Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 4, 2015. Available at www.semiviews.org and www.semi.org in January 2016.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eSilicon (Si) wafers for PV applications cut from a Si ingot or Si brick by multiple-wire sawing contain artifacts characteristic for this cutting process, so called saw marks.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThe saw marks consist of topographic features, such as grooves, steps and common mode steps (see Related Information 2), on or in the Si wafer surface and that extend along the wire direction.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eSaw marks may significantly impact the quality of wafers. They interfere with printing the contact fingers on solar cells. Extreme saw mark dimensions may interrupt the contact fingers or create too wide fingers.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eSaw marks are frequently specified for Si wafers for solar cells with respect to their maximum peak-to-valley within a finite distance, or window.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eStandardized test methods providing reproducible values for saw marks are required to specify this aspect of wafer quality.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eProcess and quality control during manufacturing of wafers requires continuous monitoring of saw marks with a noncontact method that supports high throughput.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method determines maximum peak-to-valley of saw marks of multi- or single-crystal Si wafers that typically run across the at least half of wafer surface and along the wire direction.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eIt describes an in-line, noncontacting and nondestructive method that determines the height changes of steps and grooves of clean, dry as-cut silicon wafers supported by two belts that move the test specimen through the measurement equipment.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method covers square and pseudo-square PV Si wafers, with a nominal edge length ≥125 mm and a nominal thickness ≥100 µm. It applies to both single crystalline and multicrystalline Si wafers.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThe Test Method is intended for in-line high throughput measurements. Therefore it is mandatory to operate the measurement system under statistical process control (SPC), for example ISO 11462, in order to obtain reliable, repeatable and reproducible measurement data.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThe Test Method is based on laser triangulation sensors which measure the position of the laser beam it projected onto a wafer surface and the saw marks are oriented perpendicular to the direction of wafer transport.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eOther measurement techniques may also provide similar information about saw marks of a wafer as compared to this Test Method, but they are not the subject of this Test Method.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003cp\u003eSEMI E89 — Guide for Measurement System Analysis (MSA)\u003cbr\u003e SEMI M59 — Terminology for Silicon Technology\u003cbr\u003e SEMI MF1569 — Guide for Generation of Consensus Reference Materials for Semiconductor Technology\u003cbr\u003e SEMI PV40 —Test Method for In-Line Measurement of Saw Marks on PV Silicon Wafers by a Light Sectioning Technique Using Multiple Line Segments\u003cbr\u003e SEMI PV41 —Test Method for In-Line, Noncontact Measurement of Thickness and Thickness Variation of Silicon Wafers for PV Applications Using Capacitive Probes\u003cbr\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV70-0116 - Current","offer_id":40234318266435,"sku":"5325","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/PVVolume_2312a43a-c5a4-4069-9bf2-3d48ffe37392.png?v=1776702418","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/pv07000-semi-pv70-test-method-for-in-line-measurement-of-saw-marks-on-photovoltaic-pv-silicon-wafers-by-laser-triangulation-sensors","provider":"SEMI Dev 2","version":"1.0","type":"link"}