{"product_id":"pv05200-semi-pv52-test-method-for-in-line-characterization-of-photovoltaic-silicon-wafers-regarding-grain-size","title":"PV05200 - SEMI PV52 - Test Method for In-Line Characterization of Photovoltaic Silicon Wafers Regarding Grain Size","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eMulticrystalline silicon (mc-Si) wafers consist of a multitude of crystallographically differently oriented grains. The term multicrystalline includes also so-called ‘mono-like’ Si wafers in the context of this Test Method.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe number and size of these grains vary significantly depending on the crystallization method and the wafer’s position in the ingot.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eGrain boundaries may be regions of high recombination activity in a multicrystalline wafer. They also may getter unwanted impurities from the interior of the grains and diminish their detrimental impact on solar cell conversion efficiency.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eAn appropriate solar cell manufacturing process can reduce the detrimental effects of grain boundaries and internal grain defects.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eAn optimized grain size distribution for a specific solar cell manufacturing process is preferable.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eA standardized test method for measuring the grain sizes and their distribution is required to establish wafer specifications regarding grain sizes.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThis Test Method evaluates dimensional characteristics of cross-sections of grains of mc-Si as they appear on a wafer surface.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eIt employs an in-line, noncontacting and nondestructive method for characterizing clean, dry Si wafers that are supported by a mechanism that move the test specimen through the measurement equipment.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe surface condition of the wafers may be as cut or as etched.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe test method covers square and pseudo-square Si wafers for photovoltaic (PV) applications, with a nominal edge length ≥125 mm and a nominal thickness ≥100 µm.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe test method is intended for in-line high throughput measurements. Therefore it is mandatory to operate the measurement system under statistical process control (SPC) [e.g., ISO 11462] in order to obtain reliable, repeatable and reproducible measurement data.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe test method is based on recording and evaluating images of the wafer surface obtained by a digital camera under directional transmitted or reflected light illumination.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eTwo procedures for evaluating the grain size characteristics are defined. Both methods are based on obtaining a digital image of the wafer surface displaying the grain structure that is digitally processed. The first procedure straightforwardly evaluates the grain sizes; the second procedure follows a statistical approach used in metallurgy as described in ASTM E112. The constraints of the second procedure must be checked before applying it.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe test may also be used for off-line characterization of Si wafers provided the requirements of the test method are met.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eOther measurement techniques may also provide similar information as compared to this Test Method, but they are not the subject of this Test Method.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cbr\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003c\/font\u003e\u003cp\u003e\u003cfont face=\"arial\" size=\"2\"\u003eSEMI E89 — Guide for Measurement System Analysis (MSA)\u003cbr\u003e SEMI M59 — Terminology for Silicon Technology\u003cbr\u003e SEMI MF1569 — Guide for Generation of Consensus Reference Materials for Semiconductor Technology\u003c\/font\u003e\u003cbr\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV52-0214 (Reapproved 0320) - Current","offer_id":40234319085635,"sku":"13787","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV52-0214 - Superseded","offer_id":40234319183939,"sku":"5295","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/PVVolume_a547a59d-4a34-4c0b-99ce-c80e2b64e32a.png?v=1776702440","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/pv05200-semi-pv52-test-method-for-in-line-characterization-of-photovoltaic-silicon-wafers-regarding-grain-size","provider":"SEMI Dev 2","version":"1.0","type":"link"}