{"product_id":"pv05100-semi-pv51-test-method-for-in-line-characterization-of-photovoltaic-silicon-wafers-by-using-photoluminescence","title":"PV05100 - SEMI PV51 - Test Method for In-Line Characterization of Photovoltaic Silicon Wafers by Using Photoluminescence","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eMulticrystalline silicon (mc-Si) wafers produced by casting and controlled solidification usually contain regions containing high grown-in defect density in addition to the grain boundaries.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThese defects may consist of impurity elements as well as structural defects within grains such as dislocations and dislocation networks, which may impact the solar cell efficiency negatively.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe defective areas are frequently close to the sidewalls and bottom of the ingot from which the wafers are cut.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eWafers containing highly defective areas impact the yield of a manufacturing line and should be excluded from solar cell manufacturing.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eTherefore methods are required that allow a fast in-line characterization and sorting of wafers.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThis method uses photoluminescence for detecting defective areas in wafers.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThis Test Method identifies defective areas in crystalline silicon (Si) wafers.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eIt employs an in-line, noncontacting and nondestructive method for characterizing clean, dry, as-cut Si wafers supported by a mechanism that moves the test specimen through the measurement equipment.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe method covers square and pseudo-square Si wafers for photovoltaic (PV) applications, with a nominal edge length ≥125 mm and a nominal thickness ≥100 µm. It applies to both single-crystalline as well as multicrystalline Si wafers.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe method is intended for in-line high throughput measurements. Therefore it is mandatory to operate the measurement system under statistical process control (SPC) [e.g., ISO 11462] in order to obtain reliable, repeatable and reproducible measurement data.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe method is based on recording and evaluating near-infrared photoluminescence (PL) radiation emitted from the wafer after excitation with monochromatic light.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eOther measurement techniques may also provide similar information about the defective areas of a wafer as compared to this Test Method, but they are not the subject of this Test Method.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003eThe test may also be used for off-line, stationary characterization of Si wafers provided the requirements of the test method are met.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\" size=\"2\"\u003e　\u003c\/font\u003e\u003c\/p\u003e\u003cfont face=\"arial\" size=\"2\"\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003c\/font\u003e\u003cp\u003e\u003cfont face=\"arial\" size=\"2\"\u003eSEMI E89 — Guide for Measurement System Analysis (MSA)\u003cbr\u003e SEMI M59 — Terminology for Silicon Technology\u003cbr\u003e SEMI MF1569 — Guide for Generation of Consensus Reference Materials for Semiconductor Technology\u003c\/font\u003e\u003cbr\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV51-0214 (Reapproved 0320) - Current","offer_id":40234326261827,"sku":"13786","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV51-0214 - Superseded","offer_id":40234326392899,"sku":"5293","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/PVVolume_6f5f3b63-aa01-4114-899a-ada003bc414c.png?v=1776702442","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/pv05100-semi-pv51-test-method-for-in-line-characterization-of-photovoltaic-silicon-wafers-by-using-photoluminescence","provider":"SEMI Dev 2","version":"1.0","type":"link"}