{"product_id":"pv01700-semi-pv17-specification-for-virgin-silicon-feedstock-materials-for-photovoltaic-applications","title":"PV01700 - SEMI PV17 - Specification for Virgin Silicon Feedstock Materials for Photovoltaic Applications","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eSilicon is one of the key materials in the growing photovoltaic (PV) industry. Solar cells made of silicon will be manufactured for many years to come. New parties supplying or purchasing Si feedstock materials are entering this industry.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eThe need for higher volumes and more cost efficient feedstock Si triggered development of metallurgical refining methods. In addition new methods modifying the original Siemens process were investigated and were introduced in high volume manufacturing. In parallel to the development of refining methods a wide variety of crystallization techniques and solar cell designs, each requiring specific material properties, were investigated by industry and research organizations. A multidimensional parameter space would be necessary to describe all the relations between feedstock material quality, single and multicrystalline ingots and finally solar cell performance. These would result in a multitude of interface problems, inhibiting the relations between suppliers and their customers, that is not appropriate for a high volume and fast growing industry.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eStandardized specifications for Si feedstock materials are expected to reduce these interface problems and to enable a common understanding of material properties and terms, allowing reliable manufacturing of ingots of solar cells and benefiting all parties.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eThis Specification covers virgin silicon feedstock materials produced by CVD processes, metallurgical refining processes or other processes. CVD processes include the so-called Siemens process, fluidized bed processes, powder processes and other processes using distilled silane or halosilane compounds.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eThese specified materials are intended for growing of single crystalline ingots and casting or other methods of growing multicrystalline Si, used for producing Si wafers for solar cells.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eThis Specification is not intended for material used for manufacturing thin film solar products such as amorphous or micromorphous Si products, but it may be used if it is appropriate for the specific application.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eThis Specification only applies to virgin silicon feedstock and not to scrap or waste material coming from the semiconductor industry.\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003eThis Specification is also not intended for specifying material blends, although it may be used as a guideline for melts from blended materials.\u003c\/font\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cfont face=\"arial\"\u003e　\u003c\/font\u003e\u003c\/p\u003e\u003cfont face=\"arial\"\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003c\/font\u003e\u003cp\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI M44 –– Guide to Conversion Factors for Interstitial Oxygen in Silicon\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF28 –– Test Method for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductivity Decay\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF84 –– Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF391 –– Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF397 –– Test Method for Resistivity of Silicon Bars Using a Two-Point Probe\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF723 –– Practice for Conversion between Resistivity and Dopant or Carrier Density for Boron-Doped, Phosphorous-Doped, and Arsenic-Doped Silicon\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1188 –– Test Method for Interstitial Oxygen Content of Silicon by Infrared Absorption with Short Baseline\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1389 –– Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1391 –– Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1528 — Test Method for Measuring Boron Contamination in Heavily Doped n-Type Silicon Substrates by Secondary Ion Mass Spectrometry\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1535 –– Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1630 –– Test Method for Low Temperature FTIR Analysis of Single Crystal Silicon for III-V Impurities\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1708 –– Practice for Evaluation of Granular Polysilicon by Melter-zoner Spectroscopies\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI MF1723 –– Practice for Evaluation of Polycrystalline Silicon Rods by Float-zone Crystal Growth and Spectroscopy\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI PV1 — Test Method for Measuring Trace Elements in Silicon Feedstock for Silicon Solar Cells by High-Mass Resolution Glow Discharge Mass Spectrometry\u003cbr\u003e \u003c\/font\u003e\u003cfont\u003e\u003cfont face=\"arial\"\u003eSEMI PV10 — Test Method for Instrumental Neutron Activation Analysis (INAA) of Silicon\u003cbr\u003e\u003c\/font\u003e\u003cspan lang=\"EN\"\u003e\u003cfont face=\"arial\"\u003e SEMI PV25 — Test Method for Simultaneously Measuring Oxygen, Carbon, Boron and Phosphorous in Solar Silicon Wafers and Feedstock by Secondary Ion Mass Spectrometry\u003c\/font\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/font\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV17-1012 (Reapproved 0419) - Current","offer_id":40234327539779,"sku":"8823","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV17-1012 - Superseded","offer_id":40234327703619,"sku":"5253","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV17-0312 - Superseded","offer_id":40234327932995,"sku":"12739","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV17-0611 - Superseded","offer_id":40234328096835,"sku":"12741","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/PVVolume_4fb500c6-5c0f-4963-948e-f91c5562ac5d.png?v=1776702486","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/pv01700-semi-pv17-specification-for-virgin-silicon-feedstock-materials-for-photovoltaic-applications","provider":"SEMI Dev 2","version":"1.0","type":"link"}