{"product_id":"pv01300-semi-pv13-test-method-for-contactless-excess-charge-carrier-recombination-lifetime-measurement-in-silicon-wafers-ingots-and-bricks-using-an-eddy-current-sensor","title":"PV01300 - SEMI PV13 - Test Method for Contactless Excess-Charge-Carrier Recombination Lifetime Measurement in Silicon Wafers, Ingots, and Bricks Using an Eddy-Current Sensor","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe excess-charge-carrier (hereafter referred to as\n‘excess-carrier’) recombination lifetime is the central parameter to silicon\nsolar cell device design, production, and process control. The measurement of\nthis lifetime as it depends on excess-carrier density yields physically\nsignificant results, which allows for design optimization and efficiency\nprediction in solar cells. The Test Method also describes how this\nrecombination lifetime can be further analyzed in terms of more fundamental\nparameters of importance to solar cells, such as the bulk lifetime, surface\nrecombination velocity, or the emitter saturation current density of the dopant\ndiffusion. This Test Method includes measurement by quasi-steady-state\nphotoconductance (QSSPC) and transient techniques using an eddy-current sensor.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Standard describes methods for measuring the excess-carrier\nlifetime in silicon wafers, ingots, and bricks with carrier recombination\nlifetime in the range of 0.1 to 15,000 µs.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe measurements are applicable in the excess-carrier\ndensity range from 1 × 1013 cm\u003csup\u003e−3\u003c\/sup\u003e to 2 × 1016 cm\u003csup\u003e−3\u003c\/sup\u003e for\nwafer specimens, and 1 × 1013 cm\u003csup\u003e−3\u003c\/sup\u003e to 5 × 1015 cm\u003csup\u003e−3\u003c\/sup\u003e for\nbulk specimens (thicker than 1 cm).\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe method described here is used for specimens with\nresistivity in the range from 0.1 Ω∙cm to 10000 Ω∙cm.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Standard describes four measurement methodologies: two\neach for the assessment of wafered or bulk silicon specimens. All measurement\ntechniques are performed using an inductive-coil (eddy-current) sensor\nenergized at a radio frequency and an illumination source. Two of the methods\nuse a QSSPC technique that requires a light-intensity detector to measure the\nphotogeneration. The scope of this Document also addresses the calibration\nmethod to be used.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF28 — Test Method for Minority Carrier Lifetime in\nBulk Germanium and Silicon by Measurement of Photoconductivity Decay\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF43 — Test Method for Resistivity of Semiconductor\nMaterials\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF84 — Test Method for Measuring Resistivity of\nSilicon Wafers With an In-Line Four-Point Probe\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF533 — Test Method for Thickness and Thickness\nVariation of Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF723 — Practice for Conversion Between Resistivity\nand Dopant Density for Boron-Doped, Phosphorus-Doped and Arsenic-Doped Silicon\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI PV13-0714 (Reapproved 0121)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI PV13-0714 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI PV13-0813 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI PV13-1111 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI PV13-0211 (first published)\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV13-0714 (Reapproved 0121) - 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