{"product_id":"pv00900-semi-pv9-test-method-for-excess-charge-carrier-decay-in-pv-silicon-materials-by-non-contact-measurements-of-microwave-reflectance-after-a-short-illumination-pulse","title":"PV00900 - SEMI PV9 - Test Method for Excess Charge Carrier Decay in PV Silicon Materials by Non-Contact Measurements of Microwave Reflectance After a Short Illumination Pulse","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003eThis Standard was technically approved by the Photovoltaic - Materials Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 4, 2015. Available at www.semiviews.org and www.semi.org in December 2015; originally published October 2010; previously published June 2011.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eIf the free carrier density of a semiconductor is not too high, the excess charge carrier decay time (in short, ‘decay time’) is controlled by impurity centers that have energies located in the forbidden energy gap. Many metallic impurities form such recombination centers in silicon and affect solar cell efficiency by reducing the decay time. For high efficiency cells the decay characteristics must be carefully controlled to obtain the desired high performance device.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method covers a procedure for measuring decay time in a variety of types of single crystal and multicrystalline silicon wafers, bricks and ingots. The procedure is based on the microwave photoconductance decay (µ-PCD) method in which the decay of the conductance after photoexcitation is determined by the decay time of the photogenerated excess carriers.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method covers the measurement of excess carrier decay appropriate to carrier recombination processes in \u003ci\u003en\u003c\/i\u003e- or \u003ci\u003ep\u003c\/i\u003e-type, single crystal \u003cfont size=\"2\" face=\"Arial\"\u003eor multicrystalline silicon materials. The room-temperature resistivity of the specimen should be greater than a limit that is determined by the sensitivity of the detection system and is normally in a range from 0.05 to 10 Ω·cm. This Test Method may be ap\u003cfont size=\"2\" face=\"Arial\"\u003eplied to the measurement of excess carrier decay in bricks, ingots, or as-cut, lapped, etched, or polished wafers, provided that the sensitivity of the conductivity detection system is adequate.\u003c\/font\u003e\u003c\/font\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003cp\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003e SEMI MF42 — Test Methods for Conductivity Type of Extrinsic Semiconducting Materials\u003cbr\u003e SEMI MF43 — Test Methods for Resistivity of Semiconductor Materials\u003cbr\u003e SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe\u003cbr\u003e SEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers\u003cbr\u003e SEMI MF673 — Test Methods for Measuring Resistivity of Semiconductor Slices or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage\u003cbr\u003e SEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon\u003cbr\u003e SEMI MF978 — Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques\u003cbr\u003e SEMI MF1530 — Test Method for Flatness, Thickness, and Thickness Variation of Silicon Wafers by Automated Noncontact Scanning\u003cbr\u003e SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Non-Contact Measurement of Photoconductivity Decay by Microwave Reflectance\u003cbr\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV9-0611 (Reapproved 1215) - Current","offer_id":40234328916035,"sku":"5347","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV9-0611 - Superseded","offer_id":40234328981571,"sku":"12793","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV9-1110 - Superseded","offer_id":40234329047107,"sku":"12795","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/PVVolume_c3fa9da5-f2db-4e26-98e6-a5b78e52e2b2.png?v=1776702403","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/pv00900-semi-pv9-test-method-for-excess-charge-carrier-decay-in-pv-silicon-materials-by-non-contact-measurements-of-microwave-reflectance-after-a-short-illumination-pulse","provider":"SEMI Dev 2","version":"1.0","type":"link"}