{"product_id":"pv00100-semi-pv1-test-method-for-measuring-trace-elements-in-silicon-feedstock-for-silicon-solar-cells-by-high-mass-resolution-glow-discharge-mass-spectrometry","title":"PV00100 - SEMI PV1 - Test Method for Measuring Trace Elements in Silicon Feedstock for Silicon Solar Cells by High-Mass Resolution Glow Discharge Mass Spectrometry","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003eThis Standard was technically approved by the Photovoltaic Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on August 18, 2017. Available at www.semiviews.org and www.semi.org in March 2018; originally published March 2009; previously published February 2011.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method can be used to monitor the bulk trace level elemental impurities in silicon feedstock that affect the performance of the silicon solar cell, in particular,\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e1. the concentration of intentionally added dopants, and unintentionally added dopants, that can affect the target bulk resistivity of the solar cell wafer,\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e2. the concentration of metals (e.g., iron) and other impurities that can degrade the minority carrier lifetime of the solar cell wafer.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method can be used to monitor or qualify Si feedstock to be used in either crystalline or multicrystalline silicon wafer production.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method can be used for research and development of silicon feedstock processes and products, crystalline and multicrystalline silicon growth processes.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method can be used to evaluate the failure or reduced performance of crystalline or multicrystalline silicon solar cells.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method can facilitate a unifying of protocols and test results among worldwide laboratories used for research and development support, monitoring or qualifying product for purchase or sale or internal use.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eFor most elements the detection limit for routine analysis is on the order of 1 to 100 µg\/kg (1 to 100 ppbwt).\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method covers the determination of total bulk concentrations of most of the periodic table (exceptions are atmospheric C, O, N, H and noble gases due to high background signals) in silicon feedstock using a magnetic sector high-mass resolution glow discharge mass spectrometry (HR-GDMS). This Test Method measures the total amount of each element, because this test method is independent of the element’s chemistry or electrical activity in the silicon.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method does not include all the information needed to complete HR-GDMS analyses. Sophisticated computer-controlled laboratory equipment, skillfully used by an experienced operator, is required to achieve the desired sensitivity. This Test Method does cover the particular factors (e.g., specimen preparation, setting of relative sensitivity factors, determination of detection limits) known to affect the reliability of direct trace element analysis.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method can be used for silicon in a range of physical forms, including polysilicon powders, granules, flakes, chunks, and single and multicrystalline wafers and slugs. This Test Method can be used for silicon feedstock irrespective of all dopant species and concentrations.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method is especially designed to be used for bulk analysis of silicon feedstock with elemental concentrations in the range of ppbwt to ppmwt.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThe limit of detection is determined by either the BLANK value or by count rate limitations, and may vary with instrumentation.\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003cp\u003eSEMI MF28 — Test Method for Minority Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductive Decay\u003cbr\u003e SEMI MF43 — Test Method for Resistivity of Semiconductor Materials\u003cbr\u003e SEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe\u003cbr\u003e SEMI MF391 — Test Method of Minority Carrier Diffusion Length in Extrinsic Semiconductors by Steady-State Surface Photovoltage\u003cbr\u003e SEMI MF397 — Test Method for Resistivity of Silicon Bars Using a Two-Point Probe\u003cbr\u003e SEMI MF525 — Test Method for Measuring Resistivity of Silicon Wafers Using Spreading Resistance Probe\u003cbr\u003e SEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gauge\u003cbr\u003e SEMI MF1389 — Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities\u003cbr\u003e SEMI MF1535 — Test Method for Carrier Recombination Lifetime in Silicon Wafers by Noncontact Measurement of Photoconductive Decay by Microwave Reflectance\u003cbr\u003e SEMI MF1630 — Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities\u003cbr\u003e SEMI MF1724 — Test Method for Measuring Surface Metal Contamination of Polycrystalline Silicon by Acid Extraction-Atomic Absorption Spectroscopy\u003cbr\u003e \u003cbr\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI PV1-0211 (Reapproved 0318) - Current","offer_id":40234320199747,"sku":"5244","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV1-0211 - Superseded","offer_id":40234320265283,"sku":"12722","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV1-0709 - Superseded","offer_id":40234320298051,"sku":"12727","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI PV1-0309 - Superseded","offer_id":40234320330819,"sku":"12724","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/PVVolume_f159f2ff-0108-4c98-a5ac-a8314994dead.png?v=1776702493","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/pv00100-semi-pv1-test-method-for-measuring-trace-elements-in-silicon-feedstock-for-silicon-solar-cells-by-high-mass-resolution-glow-discharge-mass-spectrometry","provider":"SEMI Dev 2","version":"1.0","type":"link"}