{"product_id":"ms01300-semi-ms13-guide-for-use-of-test-patterns-for-characterizing-a-deep-reactive-ion-etching-drie-process","title":"MS01300 - SEMI MS13 - Guide for Use of Test Patterns for Characterizing a Deep Reactive Ion Etching (DRIE) Process","description":"\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eDeep reactive ion etching (DRIE) is widely used in MEMS\nfabrication processes for creating high-aspect ratio anisotropic features.\nFurther, the etch performance is dependent on open area (OA), that is, the\namount of area subject to the etch process, which can range from 1% to 60%. It\nis also dependent on geometric pattern loading effects, the depth of the etch,\nthe materials to be etched and their preparation. The optimal parameters values\nchosen vary widely according to the type of MEMS device and application. In\naddition, each tool type—and often each process chamber—has unique recipe\nsettings for optimum etch performance for each material (typically silicon or\nsilicon dioxide) and pattern. These settings include gas flows, duration,\ntemperature profile, etc. The chamber’s environmental conditions also play a\nrole in etch performance and are usually not known to the designer before\nbringing a design to the foundry. These variables lead to significant costs to\nboth the designer and the foundry, as the process must be tuned to the specific\npattern and material combination before production can commence.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Document describes a set of etch test structures for\ncharacterizing the performance of DRIE process tools.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI 3D5 — Guide for Metrology Techniques to be Used in\nMeasurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC\nStructures\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MS13-0221 (first published)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MS13-0221 - Current","offer_id":40234374299715,"sku":"14408","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MSVolume_a81feebb-16ad-4de7-a0a3-b32872919667.png?v=1776701732","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/ms01300-semi-ms13-guide-for-use-of-test-patterns-for-characterizing-a-deep-reactive-ion-etching-drie-process","provider":"SEMI Dev 2","version":"1.0","type":"link"}