{"product_id":"mf213900-semi-mf2139-test-method-for-measuring-nitrogen-concentration-in-silicon-substrates-by-secondary-ion-mass-spectrometry","title":"MF213900 - SEMI MF2139 - Test Method for Measuring Nitrogen Concentration in Silicon Substrates by Secondary Ion Mass Spectrometry","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSecondary ion mass spectrometry (SIMS) can measure in\nun-annealed, polished Czochralski (CZ) silicon substrates the nitrogen\nconcentration that may be intentionally introduced to: (1) increase the V\/G\ntolerance for grown-in defects free region, where V is the pull rate and G is\nthe crystal temperature gradient at the solid-liquid interface; (2) increase\nthe void-free denuded zone depth and the bulk micro-defect density after\nannealing in hydrogen or argon; (3) reduce the crystal originated particle\n(COP) size after annealing; or (4) enhance the precipitation of oxygen in\nepitaxial substrates under reduced temperature processing.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSIMS can measure total bulk nitrogen in CZ-silicon, whereas\ninfrared spectroscopy is negatively affected by the chemical state in oxygen-containing\nsilicon. In addition, SIMS can measure the total bulk nitrogen in p+(B) and n+(Sb)\nsubstrates used for epitaxial silicon, whereas infrared spectroscopy cannot,\ndue to free electron absorption interferences.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSIMS can measure in un-annealed, polished Float-zoned (FZ)\nsilicon substrates the nitrogen concentration that may be introduced to\nstrengthen low oxygen substrates.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe SIMS method can be used for process check of crystal\ndoping, and for research and development.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method covers the determination of total nitrogen\nconcentration in the bulk of single crystal substrates using secondary ion mass\nspectrometry (SIMS).\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method can be used for silicon in which the\ndopant concentrations are less than 0.2% (1 × 1020 atoms\/cm3) for boron,\nantimony, arsenic, and phosphorus.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method is for bulk analysis where the nitrogen\nconcentration is constant with depth.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method can be used for silicon in which the\nnitrogen content is 1 × 1014 atoms\/cm3 or greater. The detection capability\ndepends upon the SIMS instrumental nitrogen background and the precision of the\nmeasurement.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method is complementary to infrared spectroscopy,\nelectron paramagnetic resonance, deep level transient spectroscopy, and charged\nparticle activation analysis. The infrared spectroscopy method detects nitrogen\nin specific vibrational states, rather than total nitrogen, and is limited to\nsilicon with doping concentrations less than about 1 × 1017 atoms\/cm3. The\ncharged particle activation analysis detection capability is limited by an\ninterference from boron.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eNone.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF2139-1103 (Reapproved 1121)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF2139-1103 (Reapproved 0413)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF2139-1103 (Reapproved 1110)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF2139-1103 (first SEMI publication)\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF2139-1103 (Reapproved 1121) - Current","offer_id":40234284122179,"sku":"14750","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF2139-1103 (Reapproved 0416) - Superseded","offer_id":40234284154947,"sku":"4951","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF2139-1103 (Reapproved 1110) - Superseded","offer_id":40234284187715,"sku":"9922","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF2139-1103 - Superseded","offer_id":40234284220483,"sku":"9921","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_a285bbde-fc92-4334-9627-48e718e963b0.png?v=1776702527","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf213900-semi-mf2139-test-method-for-measuring-nitrogen-concentration-in-silicon-substrates-by-secondary-ion-mass-spectrometry","provider":"SEMI Dev 2","version":"1.0","type":"link"}