{"product_id":"mf163000-semi-mf1630-test-method-for-low-temperature-ft-ir-analysis-of-single-crystal-silicon-for-iii-v-impurities","title":"MF163000 - SEMI MF1630 - Test Method for Low Temperature FT-IR Analysis of Single Crystal Silicon for III-V Impurities","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method covers the determination of electrically active boron, phosphorus, arsenic, aluminum, antimony, and gallium concentration in single crystal silicon.\u003cbr\u003e \u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method can be used for silicon in which the impurity\/dopant concentrations are between 0.01 ppba and 5 ppba for each of the electrically active elements.\u003cbr\u003e \u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThe concentration for each impurity\/dopant can be obtained by application of Beer’s Law. Calibration factors are given for each element.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M59 — Terminology for the Silicon Technology\u003cbr\u003eSEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon\u003cbr\u003eSEMI MF1391 — Test Method for Substitutional Atomic Carbon Content of Silicon by Infrared Absorption\u003cbr\u003eSEMI MF1723 — Practice for Evaluation of Polycrystalline Silicon Rods by Float-Zone Crystal Growth and Spectroscopy\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI MF1630-1107 (Reapproved 1123)\u003cbr\u003eSEMI MF1630-1107 (Reapproved 0718)\u003cbr\u003eSEMI MF1630-1107 (Reapproved 0912)\u003cbr\u003eSEMI MF1630-1107 (technical revision)\u003cbr\u003eSEMI MF1630-0704 (technical revision)\u003cbr\u003eSEMI MF1630-00 (first SEMI publication)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF1630-1107 (Reapproved 1123) - Current","offer_id":43106888974403,"sku":"17268","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1630-1107 (Reapproved 0718) - Superseded","offer_id":43106889007171,"sku":"4940","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1630-1107 (Reapproved 0912) - Superseded","offer_id":40234291560515,"sku":"9883","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1630-1107 - Superseded","offer_id":40234291658819,"sku":"9882","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1630-0704 - Superseded","offer_id":40234291724355,"sku":"9881","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1630-00 - Superseded","offer_id":40234291757123,"sku":"9880","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_55c7cd82-617c-457a-bc17-0c58ef0abb84.png?v=1776702537","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf163000-semi-mf1630-test-method-for-low-temperature-ft-ir-analysis-of-single-crystal-silicon-for-iii-v-impurities","provider":"SEMI Dev 2","version":"1.0","type":"link"}