{"product_id":"mf161900-semi-mf1619-test-method-for-measurement-of-interstitial-oxygen-content-of-silicon-wafers-by-infrared-absorption-spectroscopy-with-p-polarized-radiation-incident-at-the-brewster-angle","title":"MF161900 - SEMI MF1619 - Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method covers determination of the absorption coefficient due to the interstitial oxygen content of commercial monocrystalline silicon wafers by means of Fourier transform infrared (FT-IR) spectroscopy. In this Test Method, the incident radiation is p-polarized and incident on the test specimen at the Brewster angle in order to minimize multiple reflections. \u003cbr\u003e \u003c\/p\u003e\u003cp\u003eSince the interstitial oxygen concentration is proportional to the absorption coefficient of the 1107 cm1 absorption band, the interstitial oxygen content of the wafer can be derived directly using an independently determined calibration factor.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThe test specimen is a single-side polished silicon wafer of the type specified in SEMI M1. The front surface of the wafer is mirror polished and the back surface may be as-cut, lapped, or etched with rms roughness less than 0.9 µm (refer to ¶ 8.1.1.1).\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method is applicable to silicon wafers with resistivity greater than 5 Ω·cm at room temperature.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M1 — Specification for Polished Single Crystal Silicon Wafers\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI MF1619-1107 (Reapproved 1023)\u003cbr\u003eSEMI MF1619-1107 (Reapproved 0718)\u003cbr\u003eSEMI MF1619-1107 (Reapproved 0912)\u003cbr\u003eSEMI MF1619-1107 (technical revision)\u003cbr\u003eSEMI MF1619-1105 (technical revision)\u003cbr\u003eSEMI MF1619-95 (Reapproved 2000)E1 (first SEMI publication)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF1619-1107 (Reapproved 1023) - Current","offer_id":43106889039939,"sku":"17224","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1619-1107 (Reapproved 0718) - Superseded","offer_id":43106889072707,"sku":"4939","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1619-1107 (Reapproved 0912) - Superseded","offer_id":40234303782979,"sku":"9878","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1619-1107 - Superseded","offer_id":40234303979587,"sku":"9877","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1619-1105 - Superseded","offer_id":40234304143427,"sku":"9876","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1619-95 (Reapproved 2000)e1 - Superseded","offer_id":40234304307267,"sku":"9879","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_caef8d6c-8928-4fd0-92cc-70d6ffd51465.png?v=1776702537","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf161900-semi-mf1619-test-method-for-measurement-of-interstitial-oxygen-content-of-silicon-wafers-by-infrared-absorption-spectroscopy-with-p-polarized-radiation-incident-at-the-brewster-angle","provider":"SEMI Dev 2","version":"1.0","type":"link"}