{"product_id":"mf153500-semi-mf1535-test-method-for-carrier-recombination-lifetime-in-electronic-grade-silicon-wafers-by-noncontact-measurement-of-photoconductivity-decay-by-microwave-reflectance","title":"MF153500 - SEMI MF1535 - Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Noncontact Measurement of Photoconductivity Decay by Microwave Reflectance","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eIf the free carrier density of an electronic-grade\nsemiconductor is not too high, the carrier recombination lifetime is controlled\nby impurity centers that have energies located in the forbidden energy gap.\nMany metallic impurities form such recombination centers in silicon. In most\ncases, very small densities of these impurities (\u003c\/span\u003e\u003cspan style=\"font-size:\n10.0pt;line-height:107%;font-family:Symbol;mso-ascii-font-family:Arial;\nmso-hansi-font-family:Arial;mso-bidi-font-family:Arial;mso-char-type:symbol;\nmso-symbol-font-family:Symbol\"\u003e\u003cspan style=\"mso-char-type:symbol;mso-symbol-font-family:\nSymbol\"\u003e»\u003c\/span\u003e\u003c\/span\u003e\u003cspan style='font-size:10.0pt;line-height:107%;\nfont-family:\"Arial\",sans-serif'\u003e1010 atoms\/cm3) reduce the carrier\nrecombination lifetime and adversely affect device and circuit performance. Such\nimpurities may be introduced into the wafer during manufacture or during various\nprocessing steps, especially those that involve high temperatures.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eIn some cases, such as very fast bipolar switching devices\nand high power devices, the recombination characteristics must be carefully\ncontrolled to obtain the desired device performance, but for most\nelectronic-grade silicon wafers in use today, the concern is simply with\ncontrolling the process so that such impurities are not present. Although this\nTest Method is generally nonselective, certain individual impurity species sometimes\ncan be identified under very restricted conditions.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method is suitable for use in research and\ndevelopment, process control, and materials acceptance applications. However,\nthe results obtained by this Test Method depend on many of the experimental\nconditions including degree of surface passivation, injection level, and so\nforth. Therefore, when this Test Method is used for materials specification or\nacceptance, the supplier and the purchaser must agree fully on the experimental\nconditions used.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eIn this Test Method, the decay of the wafer conductivity\nfollowing generation of excess carriers with a light pulse is determined by\nmonitoring the microwave reflectivity of the wafer. Since no contact is made to\nthe specimen except for the mounting stage on which it rests, this Test Method\nis nondestructive. If wafer and stage cleanness is maintained, wafers may be\nfurther processed following testing by this Test Method.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eMeasurement of the carrier recombination lifetime in the\nabsence of surface recombination results in the determination of the bulk\nrecombination lifetime (\u003c\/span\u003e\u003cspan style=\"font-size:10.0pt;line-height:107%;\nfont-family:Symbol;mso-ascii-font-family:Arial;mso-hansi-font-family:Arial;\nmso-bidi-font-family:Arial;mso-char-type:symbol;mso-symbol-font-family:Symbol\"\u003e\u003cspan style=\"mso-char-type:symbol;mso-symbol-font-family:Symbol\"\u003et\u003c\/span\u003e\u003c\/span\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\"Arial\",sans-serif'\u003eb)\nprovided that the excess carrier density is much less than the majority carrier\ndensity. This determination is not included in the main part of the Test\nMethod, but information is given in Related Information 1 for those users who\nmay wish to extend it to include the reduction of surface recombination to\nallow the determination of \u003c\/span\u003e\u003cspan style=\"font-size:10.0pt;line-height:\n107%;font-family:Symbol;mso-ascii-font-family:Arial;mso-hansi-font-family:Arial;\nmso-bidi-font-family:Arial;mso-char-type:symbol;mso-symbol-font-family:Symbol\"\u003e\u003cspan style=\"mso-char-type:symbol;mso-symbol-font-family:Symbol\"\u003et\u003c\/span\u003e\u003c\/span\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\"Arial\",sans-serif'\u003eb at\nlow excess carrier density levels.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eIn general, however, it is very difficult to completely\nsuppress surface recombination, and the lifetime measurement is in many cases\ndone without any surface passivation or without confirming that the surface\npassivation is perfect. Consequently, two parameters, the 1\/e lifetime (τe)\nand\/or the primary mode lifetime (τ1), which do not depend on surface\npassivation, are determined in this Test Method.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eIn addition, the initial injection level also affects the\nmeasured lifetime value. If the initial injection level is sufficiently low,\nthe measured lifetime is not influenced by the injection level. However, to\nenhance the signal-to-noise (S\/N) ratio, higher-level injection is often\nadopted. Therefore, this Test Method also allows measurement of these\nparameters when the injection level may influence the measured lifetime\nespecially in the early stages of decay.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI M1 — Specification for Polished Single Crystal Silicon\nWafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF28 — Test Method for Minority-Carrier Lifetime in\nBulk Germanium and Silicon by Measurement of Photoconductive Decay\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF42 — Test Method for Conductivity Type of Extrinsic\nSemiconducting Materials\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF84 — Test Method for Measuring Resistivity of\nSilicon Wafers with an In-Line Four-Point Probe\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF391 — Test Method for Minority Carrier Diffusion\nLength in Extrinsic Semiconductors by Measurement of Steady-State Surface\nPhotovoltage\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF533 — Test Method for Thickness and Thickness\nVariation of Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF673 — Test Method for Measuring Resistivity of\nSemiconductor Wafers or Sheet Resistance of Semiconductor Films with a\nNoncontact Eddy-Current Gage\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF723 — Practice for Conversion Between Resistivity\nand Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF978 — Test Method for Characterizing Semiconductor\nDeep Levels by Transient Capacitance Techniques\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1388 — Test Method for Generation Lifetime and Generation\nVelocity of Silicon Material by Capacitance-Time Measurements of\nMetal-Oxide-Silicon (MOS) Capacitors\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1530 — Test Method for Flatness, Thickness, and\nThickness Variation of Silicon Wafers by Automated Noncontact Scanning\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1535-1015 (Reapproved 1121)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1535-1015 (complete rewrite)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1535-0707 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1535-1106 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1535-1104 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1535-00 (first SEMI publication)\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF1535-1015 (Reapproved 1121) - Current","offer_id":40234288611395,"sku":"14746","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1535-1015 - Superseded","offer_id":40234288775235,"sku":"4934","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1535-0707 - Superseded","offer_id":40234288939075,"sku":"9861","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1535-1106 - Superseded","offer_id":40234289070147,"sku":"9863","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1535-1104 - Superseded","offer_id":40234289332291,"sku":"9862","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1535-00 - Superseded","offer_id":40234289528899,"sku":"9860","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_3b2379bd-914f-4597-8652-1ffe038f268b.png?v=1776702542","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf153500-semi-mf1535-test-method-for-carrier-recombination-lifetime-in-electronic-grade-silicon-wafers-by-noncontact-measurement-of-photoconductivity-decay-by-microwave-reflectance","provider":"SEMI Dev 2","version":"1.0","type":"link"}