{"product_id":"mf138900-semi-mf1389-test-method-for-photoluminescence-analysis-of-single-crystal-silicon-for-iii-v-impurities","title":"MF138900 - SEMI MF1389 - Test Method for Photoluminescence Analysis of Single Crystal Silicon for III-V Impurities","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eElectronic-grade polycrystalline silicon producers and\nusers require information regarding impurities for quality assurance as well as\nfor research and development purposes. Polysilicon is float-zoned and a sample\nfrom the zoned rod is analyzed following this Test Method to obtain impurity\ndensities that can be related to the impurity content of the starting material.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003ePhotoluminescence analysis identifies and quantifies the\nelectrically active dopant impurities in monocrystalline silicon. This Test Method\naddresses boron, phosphorus, arsenic, and aluminum, found as impurities in\nelectronic grade silicon.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method can be applied to doped and undoped\nfloat-zoned or Czochralski material.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method covers the simultaneous determination of\nelectrically active boron, phosphorus, arsenic, and aluminum content in\nlow-dislocation monocrystalline silicon.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method can be used for samples that have dopant\ndensities between approximately 1 × 1011 and approximately 5 × 1015 atoms\/\u003cspan style=\"font-size: 10pt; line-height: 107%;\"\u003ecm\u003csup\u003e3\u003c\/sup\u003e\u003c\/span\u003e.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe concentrations obtained using this Test Method is based\non an empirically determined relationship of the logarithm of the concentration\nto the logarithm of specific luminescence line-intensity ratios.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe empirical relationship established assumes a constant\nsample excitation level for all measurements on a given instrument.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eTo accommodate differences in instrumentation, two methods\nare included. Test Method A refers to procedures appropriate for dispersive\ninfrared spectrophotometers operating under the high sample excitation\nconditions and Test Method B refers to procedures appropriate for Fourier\ntransform instruments operating under low excitation conditions.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eTypical calibration curves for each test method are\nprovided. These curves are modified for each instrument using the analysis of standard\nsamples as reference data. Once modified, the curves for a given instrument\nshould produce sample dopant density values that agree with other similarly\noperated instruments using the same test method. Data obtained using Test\nMethod A may not agree with data obtained using Test Method B, hence values\nmust be reported with reference to the test method used.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eMany laboratories use photoluminescence to analyze\nepitaxial layers. However this application encounters many variables and the\nunderlying physics is not fully understood; hence these test methods do not\nattempt to outline standard practices regarding such analysis.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C28 — Specification for Hydrofluoric Acid\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C30 — Specification for Hydrogen Peroxide\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C35 — Specification and Guide for Nitric Acid\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF723 — Practice for Conversion Between Resistivity\nand Dopant or Carrier Density for Boron-Doped, Phosphorus-Doped, and\nArsenic-Doped Silicon\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1630 — Test Method for Low Temperature FT-IR\nAnalysis of Single Crystal Silicon for III-V Impurities\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1723 — Practice for Evaluation of Polycrystalline\nSilicon Rods by Float-Zone Crystal Growth and Spectroscopy\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1389-1115 (Reapproved 0222)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1389-1115 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1389-1110 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1389-0704 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1389-00 (first SEMI publication)\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF1389-1115 (Reapproved 0222) - 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