{"product_id":"mf136600-semi-mf1366-test-method-for-measuring-oxygen-concentration-in-heavily-doped-silicon-substrates-by-secondary-ion-mass-spectrometry","title":"MF136600 - SEMI MF1366 - Test Method for Measuring Oxygen Concentration in Heavily Doped Silicon Substrates by Secondary Ion Mass Spectrometry","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method covers the determination of total oxygen concentration in the bulk of single crystal silicon substrates using SIMS.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method can be used for silicon in which the dopant concentrations are less than 0.2% \u003cbr\u003e(1 atoms\/cm3 × 1020 atoms\/cm3) for boron, antimony, arsenic, and phosphorus (refer to SEMI MF723). This Test Method is especially applicable for silicon that has resistivity between 0.0012 Ωcm and 1 Ωcm for p-type silicon and between 0.008 Ωcm and 0.2 Ωcm for n-type silicon (refer to SEMI MF43).\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method can be used for silicon in which the oxygen content is greater than the SIMS instrumental oxygen background as measured in a float zone silicon sample, but the test method has a useful precision especially when the oxygen content is much greater (approximately 10× to 20×) than the measured oxygen background in the float zone silicon.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method is complementary to infrared absorption spectroscopy that can be used for the measurement of interstitial oxygen in silicon that has resistivity greater than 1 Ωcm for p-type silicon and greater than 0.1 Ωcm for n-type silicon (refer to SEMI MF1188). The infrared absorption measurement can be extended to between 0.02  Ωcm and 0.1 Ωcm for n-type silicon with minor changes in the measurement procedure. \u003cbr\u003e \u003c\/p\u003e\u003cp\u003eIn principle, different sample surfaces can be used, but the precision estimate was taken from data on chemical-mechanical polished surfaces.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards \u003c\/strong\u003e(purchase separately)\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI MF43 — Test Method for Resistivity of Semiconductor Materials\u003cbr\u003eSEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Arsenic-Doped, Boron-Doped, and Phosphorus-Doped Silicon\u003cbr\u003eSEMI MF1188 — Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI MF1366-0308 (Reapproved 1023)\u003cbr\u003eSEMI MF1366-0308 (Reapproved 1018)\u003cbr\u003eSEMI MF1366-0308 (Reapproved 0413)\u003cbr\u003eSEMI MF1366-0308 (technical revision)\u003cbr\u003eSEMI MF1366-1107 (technical revision)\u003cbr\u003eSEMI MF1366-0305 (technical revision)\u003cbr\u003eSEMI MF1366-02 (first SEMI publication)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF1366-0308 (Reapproved 1023) - Current","offer_id":43106889793603,"sku":"17223","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1366-0308 (Reapproved 1018) - Superseded","offer_id":43106889826371,"sku":"4923","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1366-0308 (Reapproved 0413) - Superseded","offer_id":40234283008067,"sku":"9817","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1366-0308 - Superseded","offer_id":40234283040835,"sku":"9816","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1366-1107 - Superseded","offer_id":40234283073603,"sku":"9818","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1366-0305 - Superseded","offer_id":40234283106371,"sku":"9815","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1366-02 - Superseded","offer_id":40234283139139,"sku":"9814","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_68cc4728-ab7b-4338-b79b-d0e095e7c788.png?v=1776702564","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf136600-semi-mf1366-test-method-for-measuring-oxygen-concentration-in-heavily-doped-silicon-substrates-by-secondary-ion-mass-spectrometry","provider":"SEMI Dev 2","version":"1.0","type":"link"}