{"product_id":"mf123900-semi-mf1239-test-method-for-oxygen-precipitation-characteristics-of-silicon-wafers-by-measurement-of-interstitial-oxygen-reduction","title":"MF123900 - SEMI MF1239 - Test Method for Oxygen Precipitation Characteristics of Silicon Wafers by Measurement of Interstitial Oxygen Reduction","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eOxide precipitates in the bulk of a silicon wafer can act\nas gettering sites for contamination that may be introduced during manufacture\nof circuits and devices. This contamination (usually metallic impurities), if\nnot gettered, can reduce device manufacturing yields and degrade device or\ncircuit performance. Thus, the oxygen precipitation characteristics of the\nsilicon wafer can significantly affect both yields and performance.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eAlthough interstitial oxygen concentration is an important\nfactor in affecting the amount of oxygen precipitation that occurs in silicon\nduring a specific thermal cycle, the presence of other impurities such as\ncarbon or nitrogen, and differences in dopant type and density, thermal\nhistory, or defect properties of the crystal can also affect the precipitation\ncharacteristics. Thus, it is frequently necessary to choose particular material\nproperties and preparation techniques to obtain the desired precipitation characteristics\nfor a particular application.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method may be used to compare the oxygen\nreduction of two or more groups of silicon wafers. This Test Method is based on\nthermal cycles that simulate certain common device processing cycles.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eCycle A — A one-step precipitation cycle, provides an\nindication of the native nucleation sites present in the as-received wafers.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eCycle B — A two-step nucleation-precipitation cycle,\nsimulates the precipitation that occurs in normal n-MOS device processing.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThese test methods may be used to compare qualitatively the\nprecipitation characteristics of two or more groups of wafers.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThese test methods may also be used to determine the\nuniformity of oxygen reduction across a wafer (in conjunction with SEMI MF951)\nor from wafer to wafer within a lot.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eScope\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThese test methods cover complementary procedures for\ntesting the oxygen precipitation characteristics of silicon wafers. It is\nassumed that the precipitation characteristics are related to the amount of\ninterstitial oxygen lost during specified thermal cycles.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThese test methods may be applied to any n- or p-type\nCzochralski silicon wafers of any orientation whose thickness, resistivity, and\nsurface finish are such as to permit the oxygen concentration to be determined\nby infrared absorption and whose oxygen concentration is such as to produce\nmeasurable oxygen loss.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThese test methods are not suitable for determining the\nwidth or characteristics of a ‘denuded zone’, a region near the surface of a\nwafer that is essentially free of oxide precipitates.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eBecause these test methods are destructive, suitable\nsampling techniques must be employed.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eDetermination of material performance in actual device\nfabrication situations is beyond the scope of these methods. However, by comparing\nthe results of these tests with actual device yields and performance, criteria\nfor selection of specific material characteristics may be established.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe values stated in SI units are regarded as standard.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C28 — Specifications for Hydrofluoric Acid\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C29 — Specifications and Guide for 4.9% Hydrofluoric\nAcid 10:1 v\/v\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C54 — Specifications and Guidelines for Oxygen\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI C59 — Specifications and Guidelines for Nitrogen\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF951 — Test Method for Determination of Radial\nInterstitial Oxygen Variation Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1188 — Test Method for Interstitial Atomic Oxygen\nContent of Silicon by Infrared Absorption with Short Baseline\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1619 — Test Method for Measurement of Interstitial\nOxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized\nRadiation Incident at the Brewster Angle\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cspan style=\"font-size: 13.3333px;\"\u003eSEMI MF1239-0305 (Reapproved 0222)\u003c\/span\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1239-0305 (Reapproved 0416)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1239-0305 (Reapproved 0211)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1239-0305 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1230-02 (first SEMI publication)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF1239-0305 (Reapproved 0222) - Current","offer_id":40234302472259,"sku":"14887","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1239-0305 (Reapproved 0416) - Superseded","offer_id":40234302603331,"sku":"4922","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1239-0305 (Reapproved 0211) - Superseded","offer_id":40234302734403,"sku":"9813","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1239-0305 - Superseded","offer_id":40234302865475,"sku":"9812","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF1239-02 - Superseded","offer_id":40234303062083,"sku":"9811","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_a1b23bc2-e04b-4846-8a79-b12bd92e3a09.png?v=1776702570","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf123900-semi-mf1239-test-method-for-oxygen-precipitation-characteristics-of-silicon-wafers-by-measurement-of-interstitial-oxygen-reduction","provider":"SEMI Dev 2","version":"1.0","type":"link"}