{"product_id":"mf095100-semi-mf951-test-method-for-determination-of-radial-interstitial-oxygen-variation-in-silicon-wafers","title":"MF095100 - SEMI MF951 - Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003cbr\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThe presence of oxygen can be beneficial to certain\nmanufacturing operations by preventing the formation of process-induced\ndefects. To the extent that this is true, it becomes important that the oxygen\nbe uniformly distributed over the entire slice.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eMultiple test plans are included to satisfy a variety of\nrequirements. The characteristic shape and magnitude of oxygen concentration\ndistributions in crystals are functions of the crystal growth process. Although\nthe specified test plans are intended to cover oxygen concentration\ndistributions which are typically found, other distributions may occur. In such\ncases, it may be necessary to use test positions other than those specified in\norder to adequately describe the distribution pattern.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method may be used for process control, research\nand development, and materials acceptance purposes. In the absence of an\ninterlaboratory evaluation of the precision of this Test Method, its use for\nmaterials acceptance is not recommended unless the parties involved establish\nthe degree of correlation which can be expected.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eThis Test Method covers test site selection and data\nreduction procedures for radial variation of the interstitial oxygen\nconcentration in silicon slices typically used in the manufacture of\nmicroelectronic semiconductor devices.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF81 — Test Method for Measuring Radial Resistivity\nVariation on Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF533 — Test Method for Thickness and Thickness\nVariation of Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1188 — Test Method for Interstitial Oxygen Content\nof Silicon by Infrared Absorption with Short Baseline\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1366 — Test Method for Measuring Oxygen\nConcentration in Heavily Doped Silicon Substrates by Secondary Ion Mass\nSpectrometry\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF1619 — Test Method for Measurement of Interstitial\nOxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized\nRadiation Incident at the Brewster Angle\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF951-0305 (Reapproved 0222)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF951-0305 (Reapproved 0316)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF951-0305 (Reapproved 0211)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF951-0305 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e\n\n\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family:\n\"Arial\",sans-serif'\u003eSEMI MF951-02 (first SEMI publication)\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF951-0305 (Reapproved 0222) - Current","offer_id":40234321018947,"sku":"14916","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF951-0305 (Reapproved 0316) - Superseded","offer_id":40234321182787,"sku":"4974","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF951-0305 (Reapproved 0211) - Superseded","offer_id":40234321281091,"sku":"10023","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF951-0305 - Superseded","offer_id":40234321412163,"sku":"10022","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF951-02 - Superseded","offer_id":40234321477699,"sku":"10021","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_55a094b8-2b1f-4e7e-ae2f-be7c1ef28ea4.png?v=1776702507","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf095100-semi-mf951-test-method-for-determination-of-radial-interstitial-oxygen-variation-in-silicon-wafers","provider":"SEMI Dev 2","version":"1.0","type":"link"}