{"product_id":"mf052500-semi-mf525-test-method-for-measuring-resistivity-of-silicon-wafers-using-a-spreading-resistance-probe","title":"MF052500 - SEMI MF525 - Test Method for Measuring Resistivity of Silicon Wafers Using a Spreading Resistance Probe","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method covers the measurement of the resistivity of a silicon substrate of known orientation and type, or of a uniform silicon epitaxial layer of known orientation and type that is deposited on a substrate of the same or opposite type. Resistivity of the epitaxial films can be evaluated without the necessity of thin film correction factors provided that the ratio of layer thickness to effective probe contact radius is greater than 20.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method is comparative in that the resistivity of an unknown specimen is determined by comparing its measured spreading resistance with that of calibration standards of known resistivity. These calibration standards must have the same surface finish, conductivity type, and orientation as the unknown specimen.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method is intended for use on silicon substrates and epitaxial layers. Within-laboratory precision has been determined through a multilaboratory experiment on substrates having resistivities from 0.01 Ω·cm to 200 Ω·cm.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method is nondestructive in the sense that the specimen is not totally destroyed in making the measurements, the specimen need not be cut into a special shape, and no destructive processing need be done on the specimen. However, the probe can produce mechanical damage that may be detrimental to a device fabricated in the probed area.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eThe volume of semiconductor material sampled is proportional to the third power of the effective electrical contact radius of the probe. For an effective electrical contact radius of 2 µm, the volume sampled by a single probe is approximately 1011 cm3.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal\u003cbr\u003eSEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials\u003cbr\u003eSEMI MF84 — Test Method for Measuring Resistivity of Silicon Slices with an In-line Four-Point Probe\u003cbr\u003eSEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer\u003cbr\u003eSEMI MF110 — Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique\u003cbr\u003eSEMI MF374 — Test Method for Sheet Resistance of Silicon Epitaxial, Diffused Polysilicon, and Ion-Implanted Layers Using an In-Line Four-Point Probe with the Single-Configuration Procedure\u003cbr\u003eSEMI MF1392 — Test Method for Determining Net Carrier Density Profiles in Silicon Wafers by Capacitance-Voltage Measurements with a Mercury Probe\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI MF525-0312 (Reapproved 1023)\u003cbr\u003eSEMI MF525-0312 (Reapproved 0718)\u003cbr\u003eSEMI MF525-0312 (technical revision)\u003cbr\u003eSEMI MF525-0307 (technical revision)\u003cbr\u003eSEMI MF525-0705 (technical revision)\u003cbr\u003eSEMI MF525-00a (first SEMI publication)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF525-0312 (Reapproved 1023) - Current","offer_id":43106888253507,"sku":"17200","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF525-0312 (Reapproved 0718) - Superseded","offer_id":43106888286275,"sku":"4960","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF525-0312 - Superseded","offer_id":40234308370499,"sku":"9961","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF525-0307 - Superseded","offer_id":40234308239427,"sku":"9960","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF525-0705 - Superseded","offer_id":40234308436035,"sku":"9962","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF525-00a - Superseded","offer_id":40234308534339,"sku":"9959","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_9f7f7293-597c-48a6-af89-76783f44f6da.png?v=1776702519","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf052500-semi-mf525-test-method-for-measuring-resistivity-of-silicon-wafers-using-a-spreading-resistance-probe","provider":"SEMI Dev 2","version":"1.0","type":"link"}