{"product_id":"mf011000-semi-mf110-test-method-for-thickness-of-epitaxial-or-diffused-layers-in-silicon-by-the-angle-lapping-and-staining-technique","title":"MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Test Method covers a procedure suitable for interlaboratory comparisons of layer thickness. This Test Method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or by at least one order of magnitude in resistivity. The method described is destructive in nature but is more widely applicable than the alternative infrared method, SEMI MF95.\u003cbr\u003e \u003c\/p\u003e\u003cp\u003eFor layers with thicknesses between 1 µm and 25 µm, an interlaboratory precision as defined in ASTM E177, of ±(0.15 T + 0.5 µm) (3S) can be achieved where T represents thickness expressed in micrometers.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials\u003cbr\u003eSEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using a Dispersive Infrared Spectrophotometer\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI MF110-1107 (Reapproved 1123)\u003cbr\u003eSEMI MF110-1107 (Reapproved 0718)\u003cbr\u003eSEMI MF110-1107 (Reapproved 0912)\u003cbr\u003eSEMI MF110-1107 (technical revision)\u003cbr\u003eSEMI MF110-1105 (technical revision)\u003cbr\u003eSEMI MF110-00a (first SEMI publication)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF110-1107 (Reapproved 1123) - Current","offer_id":43106890416195,"sku":"17242","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF110-1107 (Reapproved 0718) - Superseded","offer_id":43106890448963,"sku":"4918","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF110-1107 (Reapproved 0912) - Superseded","offer_id":40234288545859,"sku":"9799","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF110-1107 - Superseded","offer_id":40234288742467,"sku":"9798","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF110-1105 - Superseded","offer_id":40234288906307,"sku":"9797","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF110-00a - Superseded","offer_id":40234289135683,"sku":"9796","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_fdf9dc47-0b0f-4367-862f-0d8e3ad23f69.png?v=1776702568","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf011000-semi-mf110-test-method-for-thickness-of-epitaxial-or-diffused-layers-in-silicon-by-the-angle-lapping-and-staining-technique","provider":"SEMI Dev 2","version":"1.0","type":"link"}