{"product_id":"mf009500-semi-mf95-test-method-for-thickness-of-lightly-doped-silicon-epitaxial-layers-on-heavily-doped-silicon-substrates-using-an-infrared-dispersive-spectrophotometer","title":"MF009500 - SEMI MF95 - Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer","description":"\u003cp\u003e\u003cbr\u003eThis Test Method is a manual technique that requires the use of a dispersive infrared spectrophotometer. For this measurement, the resistivity of the substrate must be less than 0.02 Ω·cm at 23°C and the resistivity of the layer must be greater than 0.1 Ω·cm at 23°C. A brief description of the theory of this Test Method is given in Related Information 1.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis technique is capable of measuring the thickness of both n- and p-type layers greater than 2 µm thick. With reduced precision, the technique may also be applied to both n- and p-type layers from 0.5 µm to 2 µm thick.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eAutomated test systems, utilizing Fourier-transform infrared spectrophotometry (FT-IR), are now widely used for epitaxial layer thickness measurements. Because such instruments are normally supplied with proprietary software for measurement analysis, detailed procedures for the use of such instruments are not included in this Test Method. However, for information purposes, estimates of single instrument repeatability and multi-instrument reproducibility, based on a 1986\/1987 multilaboratory comparison of FT-IR instrument measurements are given in Note 6 and Related Information 2.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003eProcedures for preparing the specimen, for measuring its size, and for determining the temperature of the specimen during the measurements are also given.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers with an In-Line Four-Point Probe\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI MF95-1107 (Reapproved 1023)\u003cbr\u003eSEMI MF95-1107 (Reapproved 0718)\u003cbr\u003eSEMI MF95-1107 (Reapproved 1012)\u003cbr\u003eSEMI MF95-1107 (technical revision)\u003cbr\u003eSEMI MF95-1105 (technical revision)\u003cbr\u003eSEMI MF95-89 (Reapproved 2000) (first SEMI publication)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI MF95-1107 (Reapproved 1023) - Current","offer_id":43106887467075,"sku":"17176","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF95-1107 (Reapproved 0718) - Superseded","offer_id":43106887499843,"sku":"4975","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF95-1107 (Reapproved 1012) - Superseded","offer_id":40234328227907,"sku":"10015","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF95-1107 - Superseded","offer_id":40234328358979,"sku":"10014","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF95-1105 - Superseded","offer_id":40234328424515,"sku":"10013","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI MF95-89 (Reapproved 2000) - Superseded","offer_id":40234327867459,"sku":"10016","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MFVolume_deb3cb3b-dde5-4a6a-a3a8-6d24d6131389.png?v=1776702507","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/mf009500-semi-mf95-test-method-for-thickness-of-lightly-doped-silicon-epitaxial-layers-on-heavily-doped-silicon-substrates-using-an-infrared-dispersive-spectrophotometer","provider":"SEMI Dev 2","version":"1.0","type":"link"}