{"product_id":"m09100-semi-m91-test-method-for-determination-of-threading-screw-dislocation-density-in-4h-sic-by-x-ray-topography","title":"M09100 - SEMI M91 - Test Method for Determination of Threading Screw Dislocation Density in 4H-SIC by X-Ray Topography","description":"\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eThreading screw dislocations (TSDs) are detrimental to several types of electronic devices manufactured from 4H-SiC.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eMost TSDs are transferred from a substrate into an epitaxial layer and may cause pits in the epi layer, which can be problematic for certain processing steps.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eThe density and distribution of TSDs is a critical parameter for evaluating the wafer quality and for failure analysis of errant device structures. X-ray topography (XRT) is able to accomplish this task. This Test Method provides information on the measurement procedure and can be used for acceptance testing.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eThis Test Method covers the determination of TSD density on round test slices and commercial 4H-SiC wafers using XRT for identification and registration of TSDs.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eThe TSD density is used as a measure for the crystallographic perfection of a crystal.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eThis Test Method describes the requirements of the sample quality and the procedure to obtain a topogram suitable for TSD identification.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eThis Test Method is applicable to material with TSD densities up to \u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003e5000 cm\u003csup\u003e−2\u003c\/sup\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003e. The resistivity, conductivity type and polarity of the analyzed side of the material is irrelevant.\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eSEMI M20 — Practice for Establishing a Wafer Coordinate System\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eSEMI M52 — Guide for Specifying Scanning Surface Inspection Systems for Silicon Wafers for the 130 nm to 11 nm Technology Generations\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eSEMI M55 — Specification for Polished Monocrystalline Silicon Carbide Wafers\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003cbr\u003e\u003cbr\u003e\u003cb\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eRevision History\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/b\u003e\u003cbr\u003e\u003cspan style=\"font-size:11pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style=\"font-family:Calibri,sans-serif\"\u003e\u003cspan style=\"font-size:10.0pt\"\u003e\u003cspan style=\"line-height:107%\"\u003e\u003cspan style='font-family:\"Arial\",sans-serif'\u003eSEMI M91-0622 (first published)\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e\u003c\/span\u003e","brand":"semi.org","offers":[{"title":"SEMI M91-0622 - Current","offer_id":40234389733443,"sku":"15113","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MVolume_0b6e0aa5-2dc9-4570-9aa1-2cff1d952941.png?v=1776701626","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/m09100-semi-m91-test-method-for-determination-of-threading-screw-dislocation-density-in-4h-sic-by-x-ray-topography","provider":"SEMI Dev 2","version":"1.0","type":"link"}