{"product_id":"m08300-semi-m83-test-method-for-determination-of-dislocation-etch-pit-density-in-monocrystals-of-iii-v-compound-semiconductors","title":"M08300 - SEMI M83 - Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound Semiconductors","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003e* This Standard has the option to purchase the Current document with a redline document (Current + Redline). The redline document is included with the Current document as a comparison tool to help identify changes that have been made between the Current version and the previous version (Superseded). If differences should exist between the redline document and the Current document, the Current version is the official and authoritative version.\u003c\/strong\u003e\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e1  Purpose\u003cbr\u003e1.1  The purpose of this Standard is to specify a test method for determination of the dislocation etch pit density of monocrystals and wafers of the III-V compound semiconductors GaAs, InP and GaP.\u003cbr\u003e2  Scope\u003cbr\u003e2.1  This Test Method covers the determination of dislocation etch pit density on round test slices and commercial wafers of III-V compound semiconductors using optical microscopy for identification and registration of dislocation etch pits.\u003cbr\u003e2.2  The dislocation etch pit density is used as a measure for the dislocation density or the crystallographic perfection of a crystal.\u003cbr\u003e2.3  This Test Method describes methods for preparation of slices and wafers of the III-V compound semiconductors GaAs, InP, and GaP with {100} or {111} surfaces by structural etching. These etching procedures are performed to reveal dislocations by formation of etch pits on the surface of the test specimens.\u003cbr\u003e2.4  The described methods for identification and registration of etch pits as well as the procedures for evaluation can be applied also to monocrystalline semiconductor slices or wafers of other materials or orientations, provided that there are suitable structural etching procedures available.\u003cbr\u003e2.5  This Test Method is applicable to material with dislocation densities up to 200,000 cm−2. The resistivity and conductivity type of the material is irrelevant.\u003cbr\u003e\u003cstrong\u003eNOTICE:\u003c\/strong\u003e SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices, and determine the applicability of regulatory or other limitations prior to use.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI M10 — Terminology for Identification of Structures and Features Seen on Gallium Arsenide Wafers\u003cbr\u003eSEMI M20 — Practice for Establishing a Wafer Coordinate System\u003cbr\u003eSEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Silicon Wafers\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003cbr\u003eSEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal\u003cbr\u003e\u003cstrong\u003eNOTICE:\u003c\/strong\u003e Unless otherwise indicated, all documents cited shall be the latest published versions.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI M83-1125 (technical revision)\u003cbr\u003eSEMI M83-0820 (technical revision)\u003cbr\u003eSEMI M83-0913 (technical revision)\u003cbr\u003eSEMI M83-1112 (first  published)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI M83-1125 - Current","offer_id":43106891137091,"sku":"18819","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI M83-1125 - Current + Redline","offer_id":43106891169859,"sku":"18820","price":38900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI M83-0820 - Superseded","offer_id":43106891202627,"sku":"14182","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI M83-0913 - Superseded","offer_id":40234297425987,"sku":"4908","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI M83-1112 - Superseded","offer_id":40234297557059,"sku":"9769","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MVolume_de2bfef6-de6f-4fda-9493-4bafb246335e.png?v=1776702576","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/m08300-semi-m83-test-method-for-determination-of-dislocation-etch-pit-density-in-monocrystals-of-iii-v-compound-semiconductors","provider":"SEMI Dev 2","version":"1.0","type":"link"}