{"product_id":"m07700-semi-m77-test-method-for-determining-wafer-near-edge-geometry-using-roll-off-amount-roa","title":"M07700 - SEMI M77 - Test Method for Determining Wafer Near-Edge Geometry Using Roll-Off Amount, ROA","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eWafer near-edge geometry can significantly affect the yield \n \n of semiconductor device processing.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eKnowledge of near-edge geometrical properties can help the \n \n producer and consumer determine if the dimensional characteristics of a \n \n specimen wafer satisfy given geometrical requirements.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThe roll-off amount (ROA) metric is suitable for \n \n quantifying near-edge geometry of wafers used in semiconductor device \n \n processing.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eConsideration should be given to the use of this or other \n \n proposed edge geometry metrics as a process control tool rather than a material \n \n exchange specification.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThis Test Method covers calculation of the near-edge \n \n geometry metric ROA.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eCalculation of ROA is based on height data that are \n \n representative of a height data profile associated with one or more of the \n \n front surface, the back surface, or thickness.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThis Test Method covers selection of the point at which the \n \n ROA is determined and the reference line to be utilized for this determination.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThis Test Method is applicable to categories of wafers \n \n specified in SEMI M1 used in advanced IC manufacturing.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThis Test Method has been shown to be suitable for \n \n quantifying near-edge geometry to improve CMP performance at wafer edge. F ROA \n \n values in that study were measured using an edge-referenced coordinate system. \n \n On the other hand, measurement systems for high volume production geometry \n \n (e.g., whole-wafer flatness) use a center-referenced coordinate system.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt; \n \n line-height:107%;font-family:\"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt; \n \n line-height:107%;font-family:\"Arial\",sans-serif'\u003eThis Test Method allows for \n \n the use of either an edge-referenced or a center-referenced coordinate system.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cspan style=\"mso-bookmark:OLE_LINK3\"\u003e\u003c\/span\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThere are other metrics for near-edge geometrical \n \n properties, some of which quantify more specific aspects. These are outside the \n \n scope of this practice.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cbr\u003e\u003c\/span\u003e\u003c\/p\u003e\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eThis Test Method does not cover acquisition of the height \n \n data array. However, it gives the required characteristics of the height data \n \n array.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M1 — Specification for Polished Single Crystal Silicon \n \n Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M20 — Practice for Establishing a Wafer Coordinate \n \n System\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M67 — Test Method for Determining Wafer Near-Edge \n \n Geometry from a Measured Thickness Data Array Using the ESFQR, ESFQD, and ESBIR \n \n Metrics\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M68 — Test Method for Determining Wafer Near-Edge \n \n Geometry from a Measured Height Data Array Using a Curvature Metric, ZDD\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M70 — Test Method for Determining Wafer Near-Edge \n \n Geometry Using partial Wafer Site Flatness\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003co:p\u003e \u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M77-1015 (Reapproved 0421)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M77-1015 (technical revision)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \n \n  \n \n \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \n \n \"Arial\",sans-serif'\u003eSEMI M77-1110 (first published)\u003c\/span\u003e\u003c\/p\u003e\u003cp\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI M77-1015 (Reapproved 0421) - Current","offer_id":40234302242883,"sku":"14490","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI M77-1015 - Superseded","offer_id":40234302373955,"sku":"4900","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI M77-1110 - Superseded","offer_id":40234302406723,"sku":"9749","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/MVolume_177c17eb-6325-42c7-9f9e-dc776768250d.png?v=1776702581","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/m07700-semi-m77-test-method-for-determining-wafer-near-edge-geometry-using-roll-off-amount-roa","provider":"SEMI Dev 2","version":"1.0","type":"link"}