{"product_id":"hb00600-semi-hb6-test-method-for-measurement-of-thickness-and-shape-of-crystalline-sapphire-wafers-by-using-optical-probes","title":"HB00600 - SEMI HB6 - Test Method for Measurement of Thickness and Shape of Crystalline Sapphire Wafers by Using Optical Probes","description":"\u003cp dir=\"ltr\" align=\"justify\"\u003eThis Standard was technically approved by the HB-LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on December 4, 2015. Available at www.semiviews.org and www.semi.org in March 2016; originally published June 2015.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eCrystalline sapphire wafers (CSW) are used as substrates for manufacturing compound semiconductor devices, in particular high brightness light emitting diodes (HB-LED).\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eIn SEMI HB1 a multitude of requirements is defined for CSW qualified for device production, including geometry and surface characteristics.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThickness (thickness, thickness variation, local thickness variation) and wafer shape (warp, bow, sori) are important characteristics for depositing layers of III-V compound on CSW during manufacturing HB-LED.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eIn addition, careful process and quality control of those wafer characteristics during CSW and device manufacturing requires continuous monitoring by the supplier as well as by the user of CSW.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eAn understanding of the measurements methods used for the qualification of CSW is required to enable agreement on specifications. Such an understanding is provided by standardized test methods for the wafer characteristics.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Document provides standardized test methods for measuring selected characteristics of CSW, geometry and surface deviations. In addition, this Document defines terms and metrics needed for quantifying the wafer geometry and surface characteristics.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method covers the noncontact, nondestructive measurement of clean CSW used for manufacturing semiconductor devices.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThe diameter and thickness range covered by this Test Method depends on details of the specific set-up used.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThe surface condition of the CSW may be as cut, etched or polished.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method does not cover measurements in the wafer edge profile.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Test Method may also be applied to wafers of other materials within the constraints of diameter, thickness and surface condition.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"left\"\u003e\u003c\/p\u003e\u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003cp\u003eSEMI E89 — Guide for Measurement System Analysis (MSA)\u003cbr\u003e SEMI HB1 — Specifications for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices\u003cbr\u003e SEMI M1 — Specification for Polished Single Crystal Silicon Wafers\u003cbr\u003e SEMI M20 — Practice for Establishing a Wafer Coordinate System\u003cbr\u003e SEMI MF1569 — Guide for Generation of Consensus Reference Materials for Semiconductor Technology\u003cbr\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI HB6-0316 - Current","offer_id":40234292248643,"sku":"4438","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/HBVolume_1e407cb9-573e-43cc-b6c1-28f6bf8d7a32.png?v=1776702638","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/hb00600-semi-hb6-test-method-for-measurement-of-thickness-and-shape-of-crystalline-sapphire-wafers-by-using-optical-probes","provider":"SEMI Dev 2","version":"1.0","type":"link"}