{"product_id":"hb00100-semi-hb1-specification-for-sapphire-wafers-intended-for-use-for-manufacturing-high-brightness-light-emitting-diode-devices","title":"HB00100 - SEMI HB1 - Specification for Sapphire Wafers Intended for Use for Manufacturing High Brightness-Light Emitting Diode Devices","description":"\u003cfont size=\"2\" face=\"Microsoft Sans Serif\"\u003e\u003cfont size=\"2\" face=\"Microsoft Sans Serif\"\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Standard was technically approved by the HB-LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 11, 2016. Available at www.semiviews.org and www.semi.org in August 2016; originally published January 2013; previously published March 2015.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eSapphire wafers are widely used in producing high brightness-light emitting diode (HB-LED) devices that are used in multiple applications such as LCD backlights, signage and solid-state lighting. Improving manufacturing efficiency and cost reductions are critical elements in enabling continued industry advance. Sapphire wafers represent a key inflection point to obtain these goals. A recent SEMI survey identified key parameters and dimensions critical to enabling manufacturing automation across multiple manufacturing steps. This Specification is intended to provide the necessary information for specifying such wafers.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Specification covers dimensional, wafer preparation, and crystallographic orientation characteristics for five categories of single-crystal single-side polished sapphire wafers used in HB-LED manufacturing as follows:\u003c\/p\u003e \u003cul\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\n\u003cli\u003eCategory 4a – Flatted 100 mm diameter, 650 µm thick, polished c-axis sapphire wafers\u003c\/li\u003e \u003cp\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\n\u003cli\u003eCategory 6a – Flatted 150 mm diameter, 1,000 µm thick, polished c-axis sapphire wafers\u003c\/li\u003e \u003cp\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\n\u003cli\u003eCategory 6b – Flatted 150 mm diameter, 1,300 µm thick, polished c-axis sapphire wafers \u003c\/li\u003e \u003cp\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\n\u003cli\u003eCategory 6c – Notched 150 mm diameter, 1,000 µm thick, polished c-axis sapphire wafers\u003c\/li\u003e \u003cp\u003e\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e \u003c\/p\u003e\n\u003cli\u003eCategory 6d – Notched 150 mm diameter, 1,300 µm thick, polished c-axis sapphire wafers\u003c\/li\u003e \u003cp\u003e\u003c\/p\u003e\n\u003c\/ul\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eIn addition, methods of measurements suitable for determining the characteristics in the specifications are indicated.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThose characteristics for which standardized values have been agreed upon are indicated in the specification tables.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eA complete purchase specification requires that additional characteristics be specified along with test methods suitable for determining their magnitude. Guidance for such characteristics is provided in Related Information 1.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eThis Specification is directed specifically to sapphire wafers with one polished surface. Wafers polished on both sides, or unpolished, or with epitaxial film, are not covered; however, customers of such wafers may find that this Specification is useful guides in defining their requirements.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003eFor referee purposes, SI (System International commonly called metric) units are used for all sapphire wafers.\u003c\/p\u003e \u003cp dir=\"ltr\" align=\"justify\"\u003e\u003c\/p\u003e\n\u003cp dir=\"ltr\" align=\"justify\"\u003e　\u003c\/p\u003e\n\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e\u003cbr\u003e\u003cp\u003eSEMI M1 — Specification for Polished Single Crystal Silicon Wafers\u003cbr\u003e SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers\u003cbr\u003e SEMI M20 — Practice for Establishing a Wafer Coordinate System\u003cbr\u003e SEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished Wafers\u003cbr\u003e SEMI M65 — Specifications for Sapphire Substrates to Use for Compound Semiconductor Epitaxial Wafers\u003cbr\u003e SEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single Crystal\u003cbr\u003e SEMI MF523 — Practice for Unaided Visual Inspections of Polished Silicon Wafer Surfaces\u003cbr\u003e SEMI MF533 — Test Method for Thickness and Thickness Variations of Silicon Wafers\u003cbr\u003e SEMI MF534 — Test Method for Bow of Silicon Wafers (Withdrawn 0115)\u003cbr\u003e SEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic Materials\u003cbr\u003e SEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray Techniques\u003cbr\u003e SEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk Substrates\u003cbr\u003e SEMI MF1152 — Test Method for Dimensions of Notches on Silicon Wafers\u003cbr\u003e SEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact Scanning\u003cbr\u003e SEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact Scanning\u003cbr\u003e SEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers\u003cbr\u003e\u003c\/p\u003e\u003c\/font\u003e\u003c\/font\u003e","brand":"semi.org","offers":[{"title":"SEMI HB1-0816 - Current","offer_id":40234284974147,"sku":"4433","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/HBVolume_54b3ebee-0de6-483b-b35d-7147c5c99c9e.png?v=1776702643","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/hb00100-semi-hb1-specification-for-sapphire-wafers-intended-for-use-for-manufacturing-high-brightness-light-emitting-diode-devices","provider":"SEMI Dev 2","version":"1.0","type":"link"}