{"product_id":"3d00500-semi-3d5-guide-for-metrology-techniques-to-be-used-in-measurement-of-geometrical-parameters-of-through-silicon-vias-tsvs-in-3ds-ic-structures","title":"3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures","description":"\u003cp\u003e \u003c\/p\u003e\u003cp\u003eThis Guide will assist the user in selection and use of tools for performing measurements of geometrical parameters of an individual through-silicon via (TSV), or of an array of TSVs. TSVs are expected to be a critical element in future three-dimensional stacked integrated circuit (3DS-IC) packaging. Advanced TSV designs with higher aspect ratios and smaller diameters may challenge TSV metrology techniques. This Guide will address the various metrology techniques that are currently available that enable TSV dimensional measurements. This Guide can also assist producers and users of TSV metrology to develop products and conduct meaningful evaluations.\u003cbr\u003e\u003cbr\u003eThis Guide focuses on the geometrical parameters of the openings (i.e., holes) in thin silicon slices, within which the conductive vias will be constructed. Additional layers on the surface of the silicon wafer, such as a hard mask, may be present; such layers may affect the performance of the metrology tools described below.\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eReferenced SEMI Standards\u003c\/strong\u003e (purchase separately)\u003cbr\u003eSEMI 3D1 — Terminology for Through Silicon via Metrology\u003cbr\u003eSEMI M59 — Terminology for Silicon Technology\u003c\/p\u003e\u003cp\u003e \u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eRevision History\u003c\/strong\u003e\u003cbr\u003eSEMI 3D5-0224 (technical revision)\u003cbr\u003eSEMI 3D5-0314 (Reapproved 1218)\u003cbr\u003eSEMI 3D5-0314 (technical revision)\u003cbr\u003eSEMI 3D5-0613 (first published)\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI 3D5-0224 - Current","offer_id":43106911748163,"sku":"17401","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI 3D5-0314 (Reapproved 1218) - Superseded","offer_id":43106911780931,"sku":"10342","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI 3D5-0314 - Superseded","offer_id":40234236969027,"sku":"1003","price":31900.0,"currency_code":"JPY","in_stock":true},{"title":"SEMI 3D5-0613 - Superseded","offer_id":40234237034563,"sku":"1099","price":31900.0,"currency_code":"JPY","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0567\/3402\/3747\/files\/3DVolume_35ca3c13-ba16-4a4e-ba07-536141cd3bc9.png?v=1776703145","url":"https:\/\/store-dev2.semi.org\/en-jp\/products\/3d00500-semi-3d5-guide-for-metrology-techniques-to-be-used-in-measurement-of-geometrical-parameters-of-through-silicon-vias-tsvs-in-3ds-ic-structures","provider":"SEMI Dev 2","version":"1.0","type":"link"}